Doan Nhat Quang

Doan Nhat Quang
Quốc gia:
Effect of Impurity Correlation on the Density of States in Slightly Compensated Heavily Doped Semiconductors

A theory is developed of the electron density of state(DOS) in slightly compensated heavily doped semiconductors which undergo thermal treatment, taking adequately into account both the ionic correlation and the electronic screening.

Effect of impurity correlation in modulation-doped quantum wires

Effect of impurity correlation in modulation-doped quantum wires

Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells

Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells

Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well

Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well

Low-temperature mobility of holes in Si /SiGe p-channel heterostructures

Low-temperature mobility of holes in Si /SiGe p-channel heterostructures

Density of states of a two-dimensional electron gas in a perpendicular magnetic field and a random field of arbitrary correlation

Density of states of a two-dimensional electron gas in a perpendicular magnetic field and a random field of arbitrary correlation

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