A theory is developed of the electron density of state(DOS) in slightly compensated heavily doped semiconductors which undergo thermal treatment, taking adequately into account both the ionic correlation and the electronic screening.
Effect of impurity correlation in modulation-doped quantum wires
Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells
Strain fluctuations in a real [001]-oriented zinc-blende-structure surface quantum well
Low-temperature mobility of holes in Si /SiGe p-channel heterostructures
Density of states of a two-dimensional electron gas in a perpendicular magnetic field and a random field of arbitrary correlation
Thư viện Học liệu Mở Việt Nam (VOER) được tài trợ bởi Vietnam Foundation và vận hành trên nền tảng Hanoi Spring. Các tài liệu đều tuân thủ giấy phép Creative Commons Attribution 3.0 trừ khi ghi chú rõ ngoại lệ.